The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

ThepresentresearchexploresthefabricationofametalinsulatorsemiconductorSchottkybarrierdiode(SBD)withrareearth
metaloxide(Yb2O3) thinfilmsasinsulatorsthatareeffectivelydevelopedonalargescaleusingthelow-cost jetnebulizer
spraypyrolysistechnique(JNSP).TheYb2O3thinfilmsaredepositedatvarioussubstratetemperatures(350°C–550°C)to
ascertain its influenceon the characteristicpropertiesof thematerial. The structural,morphological andopto-electrical
propertiesareinvestigatedusingvariouscharacterizationtechniques.Here,X-raydiffraction(XRD)analysisrevealedthe
singlecrystallinecubiccrystalstructureofYb2O3thinfilms.Fieldemissionscanningelectronmicroscope(FESEM)images
showthepresenceofuniformlydistributedcageandglobular likestructuresspreadover theentiresurfaceof theYb2O3
films.Theelemental compositionstudydemonstrates thepresenceofYbandO.Theoptical direct energybandgapof
Yb2O3 thinfilmshavebeenanalyzedthroughUV-Visiblespectra.Current–voltagemeasurementswereanalyzedindark
andlightconditionsfor theAl/Yb2O3/p-Si structuredSchottkybarrierdiodes(SBDs)whicharefabricatedwithinterfacial
layersatdifferentsubstratetemperatures.Further, thefunctionalityoftheSBDswastestedatdifferent temperaturesranging
from30°Cto150°C.Theexperimental resultsofallSBDsindicatealinearreductionintheidealityfactor(n)upto2.537
and2.059witha slight increase in theeffectivebarrier height (ФB) of 0.789eV&0.638 indarkand light conditions,
respectively. TheSBDfabricatedat 550°Crecordedgoodperformance,whichwill be suitable for thermal dependent
electronicdeviceapplications.